In Stock:
10770
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 42.8176 | |
| 10 | 41.9612 | |
| 100 | 40.6767 | |
| 1000 | 39.3922 | |
| 10000 | 37.6795 |
Products Specifications
| Package | Tube |
|---|---|
| Series | - |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 55A (Tc) |
| DriveVoltage(MaxRdsOn | 18V |
| MinRdsOn) | 52mOhm @ 20A, 18V |
| RdsOn(Max)@Id | 5.6V @ 10mA |
| Vgs | 107 nC @ 18 V |
| Vgs(th)(Max)@Id | +22V, -4V |
| Vgs(Max) | 1337 pF @ 800 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 262W (Tc) |
| PowerDissipation(Max) | 175°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | TO-247N |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
