TN0110N3-G
RoHS

TN0110N3-G

TN0110N3-G

Microchip

MOSFET N-CH 100V 350MA TO92-3

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TN0110N3-G

In Stock: 14302
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0332
10 1.0125
100 0.9815
1000 0.9505
10000 0.9092
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
PackageBag
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C350mA (Tj)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3Ohm @ 500mA, 10V
RdsOn(Max)@Id2V @ 500µA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)60 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification