SPB80N06S2-09
RoHS

SPB80N06S2-09

SPB80N06S2-09

Infineon

MOSFET N-CH 55V 80A TO263-3

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SPB80N06S2-09

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Products Specifications
Vgs(th) (Max) @ Id4V @ 125µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePG-TO263-3-2
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs9.1 mOhm @ 50A, 10V
Power Dissipation (Max)190W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesSP000013581 SPB80N06S209T
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds3140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)55V
Detailed DescriptionN-Channel 55V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C80A (Tc)