IRF7832TRPBF
RoHS

IRF7832TRPBF

IRF7832TRPBF

Infineon

MOSFET N-CH 30V 20A 8SO

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IRF7832TRPBF

In Stock: 46651
Pricing
QTY UNIT PRICE EXT PRICE
1 1.485
10 1.4553
100 1.4107
1000 1.3662
10000 1.3068
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width3.9878 mm
Height1.4986 mm
Length4.9784 mm
Fall Time13 ns
Lead FreeContains Lead, Lead Free
PackagingTape & Reel
Rise Time6.7 ns
REACH SVHCNo SVHC
Rds On Max4 mΩ
Resistance4 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Nominal Vgs2.32 V
Row Spacing6.3 mm
TerminationSMD/SMT
Case/PackageSOIC
Recovery Time62 ns
Current Rating20 A
Number of Pins8
Contact PlatingTin
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity3800
Input Capacitance4.31 nF
Power Dissipation2.5 W
Threshold Voltage2.32 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Dual Supply Voltage30 V
On-State Resistance4 mΩ
Radiation HardeningNo
Turn-Off Delay Time21 ns
Voltage Rating (DC)30 V
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature155 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)20 A
Max Junction Temperature (Tj)155 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V