IPD082N10N3GATMA1
RoHS

IPD082N10N3GATMA1

IPD082N10N3GATMA1

Infineon

MOSFET N-CH 100V 80A TO252-3

Download Datasheet

IPD082N10N3GATMA1

In Stock: 15924
Pricing
QTY UNIT PRICE EXT PRICE
1 2.1614
10 2.1182
100 2.0533
1000 1.9885
10000 1.902
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time8 ns
Lead FreeLead Free
PackagingTape & Reel
Rise Time42 ns
Rds On Max8.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins3
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance2.99 nF
Power Dissipation125 W
Turn-On Delay Time18 ns
On-State Resistance8.2 mΩ
Turn-Off Delay Time31 ns
Max Power Dissipation125 W
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)80 A
Drain to Source Voltage (Vdss)100 V