AUIRF7343QTR
Part NoAUIRF7343QTR
ManufacturerInfineon
DescriptionMOSFET N/P-CH 55V 4.7A 8SOIC
Datasheet
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ECAD Module
In Stock:
19211
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3328 | |
| 10 | 2.2861 | |
| 100 | 2.2162 | |
| 1000 | 2.1462 | |
| 10000 | 2.0529 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| REACH SVHC | No SVHC |
| Rds On Max | 50 mΩ |
| Schedule B | 8541290080 |
| Nominal Vgs | 1 V |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 4000 |
| Input Capacitance | 740 pF |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 65 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 3.4 A |
| Max Junction Temperature (Tj) | 4.7 °C |
| Drain to Source Voltage (Vdss) | 55 V |
| Drain to Source Breakdown Voltage | 55 V |
