SIR876ADP-T1-GE3
RoHS

SIR876ADP-T1-GE3

SIR876ADP-T1-GE3

Vishay

MOSFET N-CH 100V 40A PPAK SO-8

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SIR876ADP-T1-GE3

In Stock: 48349
Pricing
QTY UNIT PRICE EXT PRICE
1 1.7549
10 1.7198
100 1.6672
1000 1.6145
10000 1.5443
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.17 mm
Weight506.605978 mg
Fall Time16 ns
Lead FreeLead Free
Rise Time16 ns
REACH SVHCUnknown
Rds On Max10.8 mΩ
Resistance14.5 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Case/PackageSOIC
Number of Pins8
Input Capacitance1.63 nF
Power Dissipation5 W
Threshold Voltage1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Element ConfigurationSingle
Max Power Dissipation62.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)15.2 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)100 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage100 V