SIA913ADJ-T1-GE3
RoHS

SIA913ADJ-T1-GE3

SIA913ADJ-T1-GE3

Vishay

MOSFET 2P-CH 12V 4.5A SC70-6

Download Datasheet

SIA913ADJ-T1-GE3

In Stock: 18241
Pricing
QTY UNIT PRICE EXT PRICE
1 0.678
10 0.6644
100 0.6441
1000 0.6238
10000 0.5966
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Weight28.009329 mg
Fall Time25 ns
Rise Time25 ns
Rds On Max61 mΩ
Schedule B8541290080
Case/PackageTSSOP
Contact PlatingTin
Input Capacitance590 pF
Number of Channels2
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationDual
Max Power Dissipation6.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance50 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.3 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V