SIA414DJ-T1-GE3
RoHS

SIA414DJ-T1-GE3

SIA414DJ-T1-GE3

Vishay

MOSFET N-CH 8V 12A SC70-6

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SIA414DJ-T1-GE3

In Stock: 17576
Pricing
QTY UNIT PRICE EXT PRICE
1 1.026
10 1.0055
100 0.9747
1000 0.9439
10000 0.9029
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time20 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max11 mΩ
Resistance11 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs800 mV
Case/PackageSC
Number of Pins6
Input Capacitance1.8 nF
Power Dissipation3.5 W
Threshold Voltage800 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time65 ns
Element ConfigurationSingle
Max Power Dissipation3.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)5 V
Continuous Drain Current (ID)12 A
Drain to Source Voltage (Vdss)8 V
Drain to Source Breakdown Voltage8 V