SI8402DB-T1-E1
RoHS

SI8402DB-T1-E1

SI8402DB-T1-E1

Vishay

MOSFET N-CH 20V 5.3A 2X2 4-MFP

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SI8402DB-T1-E1

In Stock: 18406
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Products Specifications
RoHSCompliant
MountSurface Mount
Width1.6002 mm
Height355.6 µm
Length1.5748 mm
Fall Time145 ns
Lead FreeLead Free
Rise Time145 ns
Rds On Max37 mΩ
Resistance37 MΩ
Number of Pins4
Power Dissipation1.47 W
Number of Elements1
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation1.47 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)5.3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V