SI7892BDP-T1-E3
RoHS

SI7892BDP-T1-E3

SI7892BDP-T1-E3

Vishay

MOSFET N-CH 30V 15A PPAK SO-8

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SI7892BDP-T1-E3

In Stock: 23268
Pricing
QTY UNIT PRICE EXT PRICE
1 2.013
10 1.9727
100 1.9123
1000 1.852
10000 1.7714
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time35 ns
Lead FreeLead Free
Rise Time20 ns
REACH SVHCUnknown
Rds On Max4.2 mΩ
Resistance4.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1 V
Number of Pins8
Contact PlatingTin
Input Capacitance3.775 nF
Power Dissipation1.8 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time62 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.2 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)15 A
Drain to Source Voltage (Vdss)30 V