SI7850DP-T1-E3
RoHS

SI7850DP-T1-E3

SI7850DP-T1-E3

Vishay

MOSFET N-CH 60V 6.2A PPAK SO-8

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SI7850DP-T1-E3

In Stock: 48134
Pricing
QTY UNIT PRICE EXT PRICE
1 1.9968
10 1.9569
100 1.897
1000 1.8371
10000 1.7572
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCUnknown
Rds On Max22 mΩ
Resistance22 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
TerminationSMD/SMT
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.8 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Dual Supply Voltage60 V
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation1.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)6.2 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage60 V