SI7806ADN-T1-E3
RoHS

SI7806ADN-T1-E3

SI7806ADN-T1-E3

Vishay

MOSFET N-CH 30V 9A 1212-8

Download Datasheet

SI7806ADN-T1-E3

In Stock: 15418
Pricing
QTY UNIT PRICE EXT PRICE
1 1.33
10 1.3034
100 1.2635
1000 1.2236
10000 1.1704
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
Rds On Max11 mΩ
Number of Pins8
Contact PlatingTin
Power Dissipation1.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time33 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9 A
Drain to Source Voltage (Vdss)30 V