SI7716ADN-T1-GE3
RoHS

SI7716ADN-T1-GE3

SI7716ADN-T1-GE3

Vishay

MOSFET N-CH 30V 16A 1212-8

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SI7716ADN-T1-GE3

In Stock: 34565
Pricing
QTY UNIT PRICE EXT PRICE
1 1.1564
10 1.1333
100 1.0986
1000 1.0639
10000 1.0176
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max13.5 mΩ
Resistance13.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance846 pF
Power Dissipation3.5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time13 ns
Max Power Dissipation27.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance10.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)16 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V