SI7703EDN-T1-GE3
Part NoSI7703EDN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 4.3A 1212-8 PPAK
Datasheet
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ECAD Module
In Stock:
11550
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.38 | |
| 10 | 0.3724 | |
| 100 | 0.361 | |
| 1000 | 0.3496 | |
| 10000 | 0.3344 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 6 ns |
| Rise Time | 6 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 48 mΩ |
| Number of Pins | 8 |
| Power Dissipation | 1.3 W |
| Threshold Voltage | -1 V |
| Turn-On Delay Time | 4 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23 ns |
| Max Power Dissipation | 1.3 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 41 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | 4.3 A |
| Drain to Source Voltage (Vdss) | -20 V |
| Drain to Source Breakdown Voltage | 20 V |
