SI7686DP-T1-GE3
RoHS

SI7686DP-T1-GE3

SI7686DP-T1-GE3

Vishay

MOSFET N-CH 30V 35A PPAK SO-8

Download Datasheet

SI7686DP-T1-GE3

In Stock: 22957
Pricing
QTY UNIT PRICE EXT PRICE
1 1.3984
10 1.3704
100 1.3285
1000 1.2865
10000 1.2306
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time8 ns
Rise Time16 ns
REACH SVHCUnknown
Rds On Max9.5 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.22 nF
Power Dissipation5 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17.9 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V