SI7617DN-T1-GE3
RoHS

SI7617DN-T1-GE3

SI7617DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A 1212-8 PPAK

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SI7617DN-T1-GE3

In Stock: 27006
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8585
10 0.8413
100 0.8156
1000 0.7898
10000 0.7555
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time11 ns
Lead FreeLead Free
Rise Time43 ns
REACH SVHCNo SVHC
Rds On Max12.3 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance1.8 nF
Power Dissipation3.7 W
Threshold Voltage-2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance10.3 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)-35 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V