SI7456DP-T1-GE3
RoHS

SI7456DP-T1-GE3

SI7456DP-T1-GE3

Vishay

MOSFET N-CH 100V 5.7A PPAK SO-8

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SI7456DP-T1-GE3

In Stock: 19646
Pricing
QTY UNIT PRICE EXT PRICE
1 1.9998
10 1.9598
100 1.8998
1000 1.8398
10000 1.7598
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCUnknown
Rds On Max25 mΩ
Resistance25 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.9 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time46 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance25 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.7 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V