SI7430DP-T1-E3
RoHS

SI7430DP-T1-E3

SI7430DP-T1-E3

Vishay

MOSFET N-CH 150V 26A PPAK SO-8

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SI7430DP-T1-E3

In Stock: 15721
Pricing
QTY UNIT PRICE EXT PRICE
1 3.2946
10 3.2287
100 3.1299
1000 3.031
10000 2.8992
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time7 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max45 mΩ
Resistance45 mΩ
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance1.735 nF
Power Dissipation5.2 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation5.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance45 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)26 A
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage150 V