SI7149DP-T1-GE3
RoHS

SI7149DP-T1-GE3

SI7149DP-T1-GE3

Vishay

MOSFET P-CH 30V 50A PPAK SO-8

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SI7149DP-T1-GE3

In Stock: 31981
Pricing
QTY UNIT PRICE EXT PRICE
1 1.6872
10 1.6535
100 1.6028
1000 1.5522
10000 1.4847
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width6.15 mm
Height1.04 mm
Length5.15 mm
Fall Time110 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time150 ns
REACH SVHCUnknown
Rds On Max5.2 mΩ
Resistance5.2 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Contact PlatingTin
Input Capacitance4.59 nF
Power Dissipation5.2 W
Threshold Voltage-1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time100 ns
Radiation HardeningNo
Turn-Off Delay Time230 ns
Max Power Dissipation69 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.2 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)23.7 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-20 V