SI7120ADN-T1-GE3
RoHS

SI7120ADN-T1-GE3

SI7120ADN-T1-GE3

Vishay

MOSFET N-CH 60V 6A 1212-8 PPAK

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SI7120ADN-T1-GE3

In Stock: 18265
Pricing
QTY UNIT PRICE EXT PRICE
1 1.616
10 1.5837
100 1.5352
1000 1.4867
10000 1.4221
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max21 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation3.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9.5 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V