SI7101DN-T1-GE3
RoHS

SI7101DN-T1-GE3

SI7101DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A PPAK 1212-8

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SI7101DN-T1-GE3

In Stock: 15560
Pricing
QTY UNIT PRICE EXT PRICE
1 1.032
10 1.0114
100 0.9804
1000 0.9494
10000 0.9082
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time8 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max7.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance3.595 nF
Power Dissipation3.7 W
Threshold Voltage-1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time38 ns
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.8 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)-35 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V