SI5855DC-T1-E3
RoHS

SI5855DC-T1-E3

SI5855DC-T1-E3

Vishay

MOSFET P-CH 20V 2.7A 1206-8

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SI5855DC-T1-E3

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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time30 ns
Lead FreeLead Free
Rise Time30 ns
REACH SVHCUnknown
Rds On Max110 mΩ
Resistance110 mΩ
Nominal Vgs-450 mV
Case/PackageSMD/SMT
Number of Pins8
Power Dissipation1.1 W
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance110 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)2.7 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V