SI4431CDY-T1-GE3
RoHS

SI4431CDY-T1-GE3

SI4431CDY-T1-GE3

Vishay

MOSFET P-CH 30V 9A 8-SOIC

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SI4431CDY-T1-GE3

In Stock: 37485
Pricing
QTY UNIT PRICE EXT PRICE
1 0.6789
10 0.6653
100 0.645
1000 0.6246
10000 0.5974
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time11 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time89 ns
REACH SVHCUnknown
Rds On Max32 mΩ
Resistance32 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance1.006 nF
Power Dissipation2.5 W
Threshold Voltage-2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance26 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-7 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V