SI4410BDY-T1-GE3
RoHS

SI4410BDY-T1-GE3

SI4410BDY-T1-GE3

Vishay

MOSFET N-CH 30V 7.5A 8-SOIC

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SI4410BDY-T1-GE3

In Stock: 18170
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Products Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time15 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max13.5 mΩ
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.4 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation1.4 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance13.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V