SI3585DV-T1-E3
RoHS

SI3585DV-T1-E3

SI3585DV-T1-E3

Vishay

MOSFET N/P-CH 20V 2A 6-TSOP

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SI3585DV-T1-E3

In Stock: 17450
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Products Specifications
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Supplier Device Package6-TSOP
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs125 mOhm @ 2.4A, 4.5V
Power - Max830mW
PackagingCut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Other NamesSI3585DV-T1-E3CT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds-
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 4.5V
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Detailed DescriptionMosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C2A, 1.5A
Base Part NumberSI3585