SI3493BDV-T1-E3
RoHS

SI3493BDV-T1-E3

SI3493BDV-T1-E3

Vishay

MOSFET P-CH 20V 8A 6-TSOP

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SI3493BDV-T1-E3

In Stock: 18510
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0764
10 1.0549
100 1.0226
1000 0.9903
10000 0.9472
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time84 ns
Lead FreeLead Free
Rise Time72 ns
REACH SVHCUnknown
Rds On Max27.5 mΩ
Resistance27.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-900 mV
Case/PackageTSOP
Number of Pins6
Input Capacitance1.805 nF
Power Dissipation2.08 W
Threshold Voltage-400 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time22 ns
Radiation HardeningNo
Turn-Off Delay Time75 ns
Element ConfigurationSingle
Max Power Dissipation2.97 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance27.5 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)7 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V