SI3424BDV-T1-GE3
RoHS

SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

Vishay

MOSFET N-CH 30V 8A 6TSOP

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SI3424BDV-T1-GE3

In Stock: 17837
Pricing
QTY UNIT PRICE EXT PRICE
1 0.612
10 0.5998
100 0.5814
1000 0.563
10000 0.5386
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time85 ns
Rds On Max28 mΩ
Resistance28 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance735 pF
Number of Channels1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time17 ns
Element ConfigurationSingle
Max Power Dissipation2.98 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V