SI2309DS-T1-E3
RoHS

SI2309DS-T1-E3

SI2309DS-T1-E3

Vishay

MOSFET P-CH 60V 1.25A SOT23-3

Download Datasheet

SI2309DS-T1-E3

In Stock: 22548
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4929
10 0.483
100 0.4683
1000 0.4535
10000 0.4338
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current12 A
Voltage60 V
Fall Time11.5 ns
Lead FreeLead Free
Rise Time11.5 ns
Rds On Max340 mΩ
Resistance340 mΩ
Case/PackageSOT-23-3
Number of Pins3
Power Dissipation1.25 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10.5 ns
Radiation HardeningNo
Turn-Off Delay Time15.5 ns
Element ConfigurationSingle
Max Power Dissipation1.25 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance340 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-1.25 A
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V