SI2305CDS-T1-GE3
RoHS

SI2305CDS-T1-GE3

SI2305CDS-T1-GE3

Vishay

MOSFET P-CH 8V 5.8A SOT23-3

Download Datasheet

SI2305CDS-T1-GE3

In Stock: 39177
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4004
10 0.3924
100 0.3804
1000 0.3684
10000 0.3524
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current58 A
Voltage8 V
Fall Time20 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max50 mΩ
Resistance35 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23
Number of Pins3
Input Capacitance715 pF
Power Dissipation960 mW
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation960 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-4.4 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-8 V
Drain to Source Breakdown Voltage-8 V