SI2300DS-T1-GE3
RoHS

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay

MOSFET N-CH 30V 3.6A SOT-23

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SI2300DS-T1-GE3

In Stock: 48104
Pricing
QTY UNIT PRICE EXT PRICE
1 0.388
10 0.3802
100 0.3686
1000 0.357
10000 0.3414
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.12 mm
Weight1.437803 g
Fall Time11 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time15 ns
REACH SVHCUnknown
Rds On Max68 mΩ
Resistance68 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23-3
Number of Pins3
Contact PlatingTin
Input Capacitance320 pF
Power Dissipation1.1 W
Threshold Voltage600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance55 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)3.1 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V