FDP65N06
RoHS

FDP65N06

FDP65N06

onsemi

MOSFET N-CH 60V 65A TO220-3

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FDP65N06

In Stock: 19758
Pricing
QTY UNIT PRICE EXT PRICE
1 0.68
10 0.6664
100 0.646
1000 0.6256
10000 0.5984
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesUniFET™
Rds On (Max) @ Id, Vgs16 mOhm @ 32.5A, 10V
Power Dissipation (Max)135W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time9 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 65A (Tc) 135W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C65A (Tc)